Influence of Cu+ impurity on the efficiency of creation of electron hole trapping centers in irradiated Na2SO4-Cu crystals
Abstract
The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 . Cu crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic electron-hole trapping centers in the crystal lattice Na2SO4 . Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers, the energy of the re combination processes is transferred to impurities.
About the Authors
T. N. Nurakhmetov
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
B. N. Yussupbekova
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
A. M. Zhunusbekov
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
D. H. Daurenbekov
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
B. M. Sadykova
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
K. B. Zhangylyssov
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
T. T. Alibay
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
D. A. Tolekov
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
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Review
For citations:
Nurakhmetov T.N., Yussupbekova B.N., Zhunusbekov A.M., Daurenbekov D.H., Sadykova B.M., Zhangylyssov K.B., Alibay T.T., Tolekov D.A. Influence of Cu+ impurity on the efficiency of creation of electron hole trapping centers in irradiated Na2SO4-Cu crystals. Eurasian Journal of Physics and Functional Materials. 2021;5(3):200-208. https://doi.org/10.32523/ejpfm.2021050305
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