Mechanisms for the creation of intrinsic electron-hole trapping centers in a CaSO4 crystall
https://doi.org/10.32523/ejpfm.2021050308
Abstract
The mechanism of creation of electron-hole trapping centers in CaSO4 at 15-300 K was investigated by the methods of vacuum-ultraviolet and thermoactivation spectroscopy. It is shown that electron-hole trapping centers are formed upon trap of electrons in the anionic complexes SO2. and localization 4 of holes in the form of SO. radical. Based on the measurement of the spectrum of excitation of 4 long-wavelength recombination emission at 3.0-3.1 eV and 2.7 eV, the energy distance of the formed electron-hole trapping centers was estimated (4.43 eV and 3.87 eV).
About the Authors
T. N. Nurakhmetov
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
K. B. Zhangylyssov
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
A. M. Zhunusbekov
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
D. H. Daurenbekov
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
T. T. Alibay
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
B. M. Sadykova
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
B. N. Yussupbekova
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
D. A. Tolekov
L.N. Gumilyov Eurasian National University
Kazakhstan
Kazakhstan
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Review
For citations:
Nurakhmetov T.N., Zhangylyssov K.B., Zhunusbekov A.M., Daurenbekov D.H., Alibay T.T., Sadykova B.M., Yussupbekova B.N., Tolekov D.A. Mechanisms for the creation of intrinsic electron-hole trapping centers in a CaSO4 crystall. Eurasian Journal of Physics and Functional Materials. 2021;5(3):235-241. https://doi.org/10.32523/ejpfm.2021050308
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