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Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

https://doi.org/10.29317/ejpfm.2020040106

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Abstract

The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.

About the Authors

A. S. Rysbaev
Tashkent State Technical University
Uzbekistan


S. U. Irgashev
Termez State University
Uzbekistan


A. S. Kasimov
Termez State University
Uzbekistan


D. Sh. Juraeva
Termez State University
Uzbekistan


J. B. Khujaniyazov
Tashkent State Technical University
Uzbekistan


M. I. Khudoyberdieva
Termez State University
Uzbekistan


References

1. D. Leong et al., Nature 387 (1997) 686-688.

2. B. Schuller et al., J. Appl. Phys. 94 (2003) 207-211.

3. E.A. Shteyman et al., FTT 46 (2004) 26-30. (In Russian)

4. L. Martinelli et al., Appl. Phys. Lett. 83 (2003) 794-796.

5. Y. Maeda et al., Thin Solid Films 461 (2004) 160-164.

6. A.S. Rysbaev, Abstract of a doctoral dissertation Tashkent (2003) 34. (In Russian)

7. R.I. Batalov et al., FTP 35 (2001) 1320-1325. (In Russian)

8. R. Bayazitov et al., Nucl. Instrum. Methods. 24 (2005) 224-228.

9. G.G. Galkin et al., Journal of Technical Physics 78(2) (2008) 84-90.

10. T. Suemasu et al., Thin Solid Films 461 (2004) 209-218.

11. N.I. Plyusnin, Vestnik DVO RAN 5 (2010) 26-34. (In Russian)

12. L. Chenga, K. Plog, Molecular beam epitaxy and heterostructures (1989) 68-72.

13. L. Haderbache et al., Thin Solid Films 184 (1990) 317-327.

14. N.I. Plyusnin, Materials of Electronic Engineering 18(2) (2015) 81-94.

15. H.B. Ashurov, Abstract of Doct. Diss. Tashkent (1994) 30. (In Russian)

16. S.A. Audet, S.E.Wouters, IEEE Trans. Nucl. Sci. 37(1) (1990) 15-20.

17. A.S. Rysbaev et al., Abstract 8th International Conference. Almaty, Kazakhstan (2011) 350. (In Russian)

18. A.S. Rysbaev et al., Surface. 12 (2011) 98-104.

19. V.I. Fistul, FTP 21(6) (1987) 1026-1028. (In Russian)

20. V.A.Uskov et al., M.: Nauka. (1982) 110-114.

21. I.A. Popov, FTP. 3 (1996) 466-469. (In Russian)

22. K.P. Gurov, B.A. Kartashkin, Interdifussion in multiphase metal systems (M.: Nauka, 1981) 120-145.

23. K.P. Gurov, A.M. Gusak, Physics of Metals and Metallurgy. 53(5) (1982) 842-847. (In Russian)

24. A.M. Gusak, K.P. Gurov, Phys. Chem. Material Processing. 6 (1982) 109-114.

25. I.R. Bekpulatov et al., Struktura i fizicheskie svojstva nanorazmernyh plenok silicidov metallov. Monografija (Tashkent: Adabiyot uchqunlari, 2017) 230 p. (in Russian)

26. A.S. Rysbaev et al., Technical Physics. 59(10) (2014) 1526-1530.

27. A.S. Rysbaev et al., E-MRS Spring Meeting, Lille, France (2016) P. 2.8.

28. A.S. Rysbaev et al., Abstract XLVII International Tulin Conference, Moscow, (2017) 136.

29. A.S. Rysbaev et al., International Symposium, Tashkent. (2016) 351-352.

30. A.S. Rysbaev et al., International Symposium, Tashkent. (2016) 235.

31. V.V. Gorganova, X-ray, electron spectra and chemical bonds (1986) 222-290.


For citation:


Rysbaev A.S., Irgashev S.U., Kasimov A.S., Juraeva D.S., Khujaniyazov J.B., Khudoyberdieva M.I. Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides. Eurasian Journal of Physics and Functional Materials. 2020;4(1):50-60. https://doi.org/10.29317/ejpfm.2020040106

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ISSN 2522-9869 (Print)
ISSN 2616-8537 (Online)