Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides
https://doi.org/10.29317/ejpfm.2020040106
Abstract
The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.
About the Authors
A. S. Rysbaev
Tashkent State Technical University
Uzbekistan
Uzbekistan
S. U. Irgashev
Termez State University
Uzbekistan
Uzbekistan
A. S. Kasimov
Termez State University
Uzbekistan
Uzbekistan
D. Sh. Juraeva
Termez State University
Uzbekistan
Uzbekistan
J. B. Khujaniyazov
Tashkent State Technical University
Uzbekistan
Uzbekistan
M. I. Khudoyberdieva
Termez State University
Uzbekistan
Uzbekistan
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Review
For citations:
Rysbaev A.S., Irgashev S.U., Kasimov A.S., Juraeva D.Sh., Khujaniyazov J.B., Khudoyberdieva M.I. Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides. Eurasian Journal of Physics and Functional Materials. 2020;4(1):50-60. https://doi.org/10.29317/ejpfm.2020040106
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