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Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

https://doi.org/10.29317/ejpfm.2019030307

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Abstract

The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing p- and n-structures and the possibilities of their application in electronics are discussed.

About the Authors

A. S. Rysbaev
Tashkent State Technical University
Uzbekistan


I. R. Bekpulatov
Institute of Fire Safety of the Ministry of Emergencies of the Republic of Uzbekistan
Uzbekistan


B. D. Igamov
Tashkent State Technical University
Uzbekistan


Sh. X. Juraev
Termez State University
Uzbekistan


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For citation:


Rysbaev A.S., Bekpulatov I.R., Igamov B.D., Juraev S.X. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing. Eurasian Journal of Physics and Functional Materials. 2019;3(3):254-259. https://doi.org/10.29317/ejpfm.2019030307

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ISSN 2522-9869 (Print)
ISSN 2616-8537 (Online)