For citations:

Rysbaev A.S., Bekpulatov I.R., Igamov B.D., Juraev S.X. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing. Eurasian Journal of Physics and Functional Materials. 2019;3(3):254-259. https://doi.org/10.29317/ejpfm.2019030307