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Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

https://doi.org/10.29317/ejpfm.2018020408

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Abstract

The paper considers the influence of a transition amorphous layer at the interface between the higher manganese silicide (HMS) Mn 4 Si 7 and silicon  doped with manganese (Si ) on the photoelectric properties of  heterostructures. The role of the initial structural defects in the near-surface  layers of the single-crystal silicon on the penetration of manganese atoms  into Si upon doping from the gas phase is shown.It has been established that  at high temperatures (T>1050 ◦ C) Mn atoms deposited on the silicon  surface group together (due to surface diffusion), forming droplets of liquid  manganese, which dissolve the near-surface silicon layer, forming a liquid  solution – a melt of Mnand Si. When Mn atoms transfer from the vapor phase  into the liquid solution-melt and Si atoms diffuse into it from the  boundary regions, including the amorphous bulk Si layer, the solution-melt  increases in size and solidifies. During solidification, higher manganese  silicide (HMS) Mn 4 Si 7 is formed, and under silicide, due to intense diffusion  of Si atoms, the Si-Si bonds break, and an amorphous and  elastically deformed Si region is formed, which predetermines the evolution  of photoelectric phenomena in heterostructures Mn 4 Si 7 - Si-Mn 4 Si 7 and Mn 4 Si 7 -Si-M.

About the Authors

T. S. Kamilov
Tashkent State Technical University
Uzbekistan


A. S. Rysbaev
Tashkent State Technical University
Uzbekistan


V. V. Klechkovskaya
Shubnikov Institute of Crystallography
Russian Federation


A. S. Orekhov
Shubnikov Institute of Crystallography
Russian Federation


Sh. Kh. Dzhuraev
Termez State University
Uzbekistan


A. S. Kasymov
Termez State University
Uzbekistan


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Review

For citations:


Kamilov T.S., Rysbaev A.S., Klechkovskaya V.V., Orekhov A.S., Dzhuraev S.K., Kasymov A.S. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M. Eurasian Journal of Physics and Functional Materials. 2018;2(4):360-366. https://doi.org/10.29317/ejpfm.2018020408

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ISSN 2522-9869 (Print)
ISSN 2616-8537 (Online)