Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)
Abstract
In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribution profile P and B atoms implanted in the Si gradually decreasing energy. The effect of the subsequent thermal and annealing IR profile on the distribution of the atoms and the characteristics of the temperature sensor was studied.
About the Authors
I. R. Bekpulatov
Tashkent State Technical University
Uzbekistan
Uzbekistan
A. S. Rysbaev
Tashkent State Technical University
Uzbekistan
Uzbekistan
Sh. Kh. Dzhuraev
Termez State University
Uzbekistan
Uzbekistan
A. S. Kasymov
Termez State University
Uzbekistan
Uzbekistan
References
1. Y.Y Yuldashev et al., Patent RU. The IAP 2013/4.779, published 10.10.2013.
2. B.M Abdurakhmanov et al., Solar technology 4 (1998) 74-78.
3. B.M. Abdurakhmanov et al., Solar technology 5 (1998) 78-83.
4. B.M. Abdurakhmanov et al., Uzbek journal of Physics 2(1) (2000) 73-75.
5. K.P. Abdurakhmanov et al., FTP 3 (1996) 392.
6. M.K. Bahadyrhanov et al., Solar technology 2 (2001) 2-11.
7. M.M. Mirzabaev et al., Solar technology 1 (2000) 91.
8. D.J. DiMaria et al., J. Appl. Phys. 52 (1981) 7251.
9. A. Harstein et al., J. Phys. 8 (1975) 249.
10. W.R. Bottoms et al., J. Vac. Sce and Technol 11 (1974) 965.
11. A.S. Rysbaev et al., Technology and Electronics 46(9) (2001) 1148-1150.
Review
For citations:
Bekpulatov I.R., Rysbaev A.S., Dzhuraev S.K., Kasymov A.S. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111). Eurasian Journal of Physics and Functional Materials. 2018;2(4):367-376. https://doi.org/10.29317/ejpfm.2018020409
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