Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)
https://doi.org/10.29317/ejpfm.2018020409
Abstract
In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribution profile P and B atoms implanted in the Si gradually decreasing energy. The effect of the subsequent thermal and annealing IR profile on the distribution of the atoms and the characteristics of the temperature sensor was studied.
About the Authors
I. R. Bekpulatov
Tashkent State Technical University
Uzbekistan
Uzbekistan
A. S. Rysbaev
Tashkent State Technical University
Uzbekistan
Uzbekistan
Sh. Kh. Dzhuraev
Termez State University
Uzbekistan
Uzbekistan
A. S. Kasymov
Termez State University
Uzbekistan
Uzbekistan
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Review
For citations:
Bekpulatov I.R., Rysbaev A.S., Dzhuraev Sh.Kh., Kasymov A.S. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111). Eurasian Journal of Physics and Functional Materials. 2018;2(4):367-376. https://doi.org/10.29317/ejpfm.2018020409
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