Bekpulatov I.R., Rysbaev A.S., Dzhuraev S.K., Kasymov A.S. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111). Eurasian Journal of Physics and Functional Materials. 2018;2(4):367-376. https://doi.org/10.29317/ejpfm.2018020409
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Email the author (Login required) Deputy Editor-In-Chief:
Asset Kabyshev
L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan.
e-mail: assetenu@gmail.com
