Eurasian Journal of Physics and Functional Materials
https://www.ephys.kz/jour
Peer-reviewed journal "Eurasian Journal of Physics and Functional Materials"L.N. Gumilyov Eurasian National Universityen-USEurasian Journal of Physics and Functional Materials2522-9869<p>Authors who publish with this journal agree to the following terms:</p><ol><li>Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a <a href="http://creativecommons.org/licenses/by/3.0/" target="_new">Creative Commons Attribution License</a> that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.</li><li>Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.</li><li>Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See <a href="http://opcit.eprints.org/oacitation-biblio.html" target="_new">The Effect of Open Access</a>).</li></ol>Production of ZnO thin films used in solar cell with a sol-gel homemade dip coater technique and investigated of their structural, morphological and optical properties
https://www.ephys.kz/jour/article/view/713
<p style="text-align: justify;">We designed a homemade dip coater controlled by an Arduino microcontroller to produce semiconductor metal oxide films such as ZnO, CoO, and NiO. The developed device was successfully used to deposit ZnO film on a glass substrate. The structural, surface, and optical properties of the film were investigated. XRD patterns showed that the film is predominantly a hexagonal wurtzite crystalline structure. Scanning electron microscopy (SEM) images showed that the ZnO film was uniformly and homogeneously coated on the glass substrate. EDX analysis confirmed the presence of Zn and O in the film structure. Optical characterization by UV-visible spectrometry showed that the ZnO film has a high transmittance of over 85% in the visible region and absorbs wavelengths in the range of 300–400 nm. Moreover, the band gap of the ZnO film calculated by the Tauc equation was determined as 3.398 eV.</p>Z. GültekinC. AkayN. A. GültekinM. Alper2023-12-202023-12-207Effect of electron irradiation on mechanical, tribological and thermal properties of polytetrafluoroethylene
https://www.ephys.kz/jour/article/view/714
<p style="text-align: justify;">The article presents the study results of the electron irradiation effect on the mechanical, tribological and thermal properties of polytetrafluoroethylene (PTFE). The results allow a better understanding of the processes occurring in the structure of PTFE under irradiation and reveal potential applications of the modified material with improved tribological characteristics, high thermal resistance and mechanical strength. In this work the samples were tested for wear resistance and thermal stability. It was found that the effect of electron irradiation leads to a significant increase in the microhardness of the material by 1.5 times compared to the initial state. However, degradation of the thermal properties of the polymer due to the breakage of molecular chains is observed, which may affect its resistance to high temperatures and mechanical stresses. Such studies are important to advance the knowledge of the effects of irradiation on the structures and properties of polymeric materials. These results highlight the complex interaction between electron irradiation and the properties of polytetrafluoroethylene, which is important for understanding and optimising the application of this polymer in various engineering and industrial applications.</p>K. D. OrmanbekovB. K. RakhadilovA. Zh. ZhassulanN. E. MukhamedovA. B. ShynarbekN. M. Magazov2023-12-202023-12-207Scanning tunneling spectroscopy of homooligonucleotides
https://www.ephys.kz/jour/article/view/715
<p style="text-align: justify;">Short single-stranded DNA molecules of two types, consisting of dC nucleotides only or dA nucleotides only, were immobilized onto the surface of mica and silver substrates and studied by scanning probe microscopy methods. Geometric dimensions of the studied objects were determined. The currentvoltage curves of d(A)12 and d(C)12 oligonucleotides were measured. Their differential electrical resistances were estimated and compared with each other.</p>T. SharipovR. GarafutdinovA. MishraS. SanterR. ShaikhitdinovM. BalapanovR. Bakhtizin2023-12-202023-12-207Characterization and luminescence dynamics of MgF2:W ceramics
https://www.ephys.kz/jour/article/view/716
<p style="text-align: justify;">This study delves into the synthesis and characterization of luminescent ceramics based on tungstenactivated magnesium fluoride (MgF<sub>2</sub>) complemented with varying concentrations of lithium hydroxide (LiOH). Utilizing a distinctive sintering process conducted in an open-air milieu under robust radiation conditions, we successfully synthesized a series of tungsten-activated ceramics. Study revealed that the resultant ceramics prominently display luminescent properties, which can be excited by UV radiation in the spectrum of 200-300 nm, as well as by high-energy electron fluxes. The spectral characteristics of these ceramics, in terms of band position, half-width, and excitation spectra, are strikingly analogous to those observed in LiF crystals activated by tungsten and titanium ions. This observation led to the conclusion that luminescent centers, similar to those in LiF crystals, are formed during the ceramic synthesis.</p>A.V. StrelkovaV. M. LisitsynL. A. LisitsynaT.A. KoketaiD. A. MussakhanovZh.T. KaripbayevA. M. Zhunusbekov2023-12-202023-12-207Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions
https://www.ephys.kz/jour/article/view/717
<p style="text-align: justify;">In the presented article, samples were studied using Auger electron spectroscopy, recording the angular dependences of the coefficient of elastically reflected electrons h, and spectroscopy of elastically reflected electrons. A change in the composition and degree of disorder of the surface layers of Si (111) was detected when bombarded with Ar<sup>+</sup> and K<sup>+</sup> ions with a change in energy E<sub>0</sub> ∼ from 1 to 10 keV and ion dose from ∼ 10<sup>13</sup> to 1017 cm<sup>−2</sup>. It was found that although the Ar and K atoms have the same masses, at the same ion energies, the degree of disordering of the near-surface Si(111) layer differs significantly. The observed effect is explained by the significant difference in their ionic radii.<br />It is shown that at E<sub>0</sub>≥3 keV, the complete amorphization of near-surface layers occurs at relatively<br />lower doses than surface amorphization.</p>B. E. UmirzakovI. R. BekpulatovG. T. ImanovaI. Kh. TurapovJ. M. Jumaev2023-12-202023-12-207Stability of non-centrosymmetric phases in tetra-coordinated of LDTM intercalates
https://www.ephys.kz/jour/article/view/718
<p style="text-align: justify;">On the basis of comparison of temperature dependences of lattice parameters of CuCrSe<sub>2</sub> and Cu<sub>0.5</sub>ZrSe<sub>2</sub> in the temperature region including transition between phases with centrosymmetric and noncentrosymmetric distribution of copper on positions tetrahedrally coordinated by selenium. It is concluded that the critical factor that ensures the stability of the non- centrosymmetric copper distribution is the covalent interaction between copper and selenium sublattices. This effect is not related to the anisotropy of the elastic constants of the lattice and can be observed in other layered structures with copper tetrahedrally coordinated by chalcogen.</p>A. S. ShkvarinM.S. PostnikovS. V. PryanichnikovA. N. Titov2023-12-202023-12-207