We designed a homemade dip coater controlled by an Arduino microcontroller to produce semiconductor metal oxide films such as ZnO, CoO, and NiO. The developed device was successfully used to deposit ZnO film on a glass substrate. The structural, surface, and optical properties of the film were investigated. XRD patterns showed that the film is predominantly a hexagonal wurtzite crystalline structure. Scanning electron microscopy (SEM) images showed that the ZnO film was uniformly and homogeneously coated on the glass substrate. EDX analysis confirmed the presence of Zn and O in the film structure. Optical characterization by UV-visible spectrometry showed that the ZnO film has a high transmittance of over 85% in the visible region and absorbs wavelengths in the range of 300–400 nm. Moreover, the band gap of the ZnO film calculated by the Tauc equation was determined as 3.398 eV.

The article presents the study results of the electron irradiation effect on the mechanical, tribological and thermal properties of polytetrafluoroethylene (PTFE). The results allow a better understanding of the processes occurring in the structure of PTFE under irradiation and reveal potential applications of the modified material with improved tribological characteristics, high thermal resistance and mechanical strength. In this work the samples were tested for wear resistance and thermal stability. It was found that the effect of electron irradiation leads to a significant increase in the microhardness of the material by 1.5 times compared to the initial state. However, degradation of the thermal properties of the polymer due to the breakage of molecular chains is observed, which may affect its resistance to high temperatures and mechanical stresses. Such studies are important to advance the knowledge of the effects of irradiation on the structures and properties of polymeric materials. These results highlight the complex interaction between electron irradiation and the properties of polytetrafluoroethylene, which is important for understanding and optimising the application of this polymer in various engineering and industrial applications.

Short single-stranded DNA molecules of two types, consisting of dC nucleotides only or dA nucleotides only, were immobilized onto the surface of mica and silver substrates and studied by scanning probe microscopy methods. Geometric dimensions of the studied objects were determined. The currentvoltage curves of d(A)12 and d(C)12 oligonucleotides were measured. Their differential electrical resistances were estimated and compared with each other.

This study delves into the synthesis and characterization of luminescent ceramics based on tungstenactivated magnesium fluoride (MgF₂) complemented with varying concentrations of lithium hydroxide (LiOH). Utilizing a distinctive sintering process conducted in an open-air milieu under robust radiation conditions, we successfully synthesized a series of tungsten-activated ceramics. Study revealed that the resultant ceramics prominently display luminescent properties, which can be excited by UV radiation in the spectrum of 200-300 nm, as well as by high-energy electron fluxes. The spectral characteristics of these ceramics, in terms of band position, half-width, and excitation spectra, are strikingly analogous to those observed in LiF crystals activated by tungsten and titanium ions. This observation led to the conclusion that luminescent centers, similar to those in LiF crystals, are formed during the ceramic synthesis.

In the presented article, samples were studied using Auger electron spectroscopy, recording the angular dependences of the coefficient of elastically reflected electrons h, and spectroscopy of elastically reflected electrons. A change in the composition and degree of disorder of the surface layers of Si (111) was detected when bombarded with Ar⁺ and K⁺ ions with a change in energy E₀ ∼ from 1 to 10 keV and ion dose from ∼ 10¹³ to 1017 cm⁻². It was found that although the Ar and K atoms have the same masses, at the same ion energies, the degree of disordering of the near-surface Si(111) layer differs significantly. The observed effect is explained by the significant difference in their ionic radii.
It is shown that at E₀≥3 keV, the complete amorphization of near-surface layers occurs at relatively
lower doses than surface amorphization.

On the basis of comparison of temperature dependences of lattice parameters of CuCrSe₂ and Cu_0.5ZrSe₂ in the temperature region including transition between phases with centrosymmetric and noncentrosymmetric distribution of copper on positions tetrahedrally coordinated by selenium. It is concluded that the critical factor that ensures the stability of the non- centrosymmetric copper distribution is the covalent interaction between copper and selenium sublattices. This effect is not related to the anisotropy of the elastic constants of the lattice and can be observed in other layered structures with copper tetrahedrally coordinated by chalcogen.