Bekpulatov, I. R., Tashkent State Technical University, Uzbekistan

• Vol 2, No 4 (2018) - Статьи
  Development of thermal sensors by implantation ions P⁺ and B⁺ in different sides of Si(111)
  Abstract  PDF (Eng)
• Vol 7, No 4 (2023) - Статьи
  Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions
  Abstract  PDF (Eng)