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Vol 3, No 3 (2019) | Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing | Abstract PDF (Eng) similar documents |
A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Sh. X. Juraev | ||
Vol 4, No 1 (2020) | Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides | Abstract PDF (Eng) similar documents |
A. S. Rysbaev, S. U. Irgashev, A. S. Kasimov, D. Sh. Juraeva, J. B. Khujaniyazov, M. I. Khudoyberdieva | ||
"... with a single crystal structure. ..." | ||
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