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Abstract

The mechanisms of creation of intrinsic and impurity trapping centers, the interaction of which forms combined or induced electronic states under the conduction band, have been studied using optical and thermal activation spectroscopy. It is shown that electron-hole trapping centers are created when free electrons are trapped by impurities and ions of the matrix, as well as as a result of charge transfer from the excited anion to impurities and to neighboring ions by the reaction and (–. The hole component of the trapping center is formed when holes are localized above the valence band. During relaxation, the combined emission state decays with the transfer of energy from its own matrix to the emitters.

Article Type

Original Study

First Page

148

Last Page

154

Creative Commons License

Creative Commons Attribution 4.0 International License
This work is licensed under a Creative Commons Attribution 4.0 International License.

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