Abstract
In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribution profile P and B atoms implanted in the Si gradually decreasing energy. The effect of the subsequent thermal and annealing IR profile on the distribution of the atoms and the characteristics of the temperature sensor was studied.
Recommended Citation
Bekpulatov, I. R.; Rysbaev, A. S.; Dzhuraev, Sh. Kh.; and Kasymov, A. S.
(2018)
"Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111),"
Eurasian Journal of Physics and Functional Materials: Vol. 2:
No.
4, Article 9.
DOI: 10.29317/ejpfm.2018020409
Available at:
https://www.ephys.kz/journal/vol2/iss4/9
First Page
367
Last Page
376
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