Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

Authors

A. S. Rysbaev, Tashkent State Technical University ,Uzbekistan
S. U. Irgashev, Termez State University ,Uzbekistan
A. S. Kasimov, Termez State University ,Uzbekistan
D. Sh. Juraeva, Termez State University ,Uzbekistan
J. B. Khujaniyazov, Tashkent State Technical University ,Uzbekistan
M. I. Khudoyberdieva, Termez State University ,Uzbekistan ,

Abstract

The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.

Recommended Citation

Rysbaev, A. S.; Irgashev, S. U.; Kasimov, A. S.; Juraeva, D. Sh.; Khujaniyazov, J. B.; and Khudoyberdieva, M. I. (2020) "Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides," Eurasian Journal of Physics and Functional Materials: Vol. 4: No. 1, Article 6.
DOI: 10.29317/ejpfm.2020040106
Available at: https://www.ephys.kz/journal/vol4/iss1/6

First Page

50

Last Page

60

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.