Article Type
Original Study
Abstract
The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 . Cu crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic electron-hole trapping centers in the crystal lattice Na2SO4 . Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers, the energy of the re combination processes is transferred to impurities.
First Page
200
Last Page
208
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This work is licensed under a Creative Commons Attribution 4.0 International License.
Recommended Citation
Nurakhmetov, T. N.; Yussupbekova, B. N.; Zhunusbekov, A. M.; Daurenbekov, D. H.; Sadykova, B. M.; Zhangylyssov, K. B.; Alibay, T. T.; and Tolekov, D. A.
(2021)
"Influence of Cu+ impurity on the efficiency of creation of electron hole trapping centers in irradiated Na2SO4-Cu crystals,"
Eurasian Journal of Physics and Functional Materials: Vol. 5:
No.
3, Article 5.
DOI: https://doi.org/10.32523/ejpfm.2021050305