Abstract
The mechanism of creation of electron-hole trapping centers in CaSO4 at 15-300 K was investigated by the methods of vacuum-ultraviolet and thermoactivation spectroscopy. It is shown that electron-hole trapping centers are formed upon trap of electrons in the anionic complexes SO2. and localization 4 of holes in the form of SO. radical. Based on the measurement of the spectrum of excitation of 4 long-wavelength recombination emission at 3.0-3.1 eV and 2.7 eV, the energy distance of the formed electron-hole trapping centers was estimated (4.43 eV and 3.87 eV).
Recommended Citation
Nurakhmetov, T. N.; Zhangylyssov, K. B.; Zhunusbekov, A. M.; Daurenbekov, D. H.; Alibay, T. T.; Sadykova, B. M.; Yussupbekova, B. N.; and Tolekov, D. A.
(2021)
"Mechanisms for the creation of intrinsic electron-hole trapping centers in a CaSO4 crystal,"
Eurasian Journal of Physics and Functional Materials: Vol. 5:
No.
3, Article 8.
DOI: https://doi.org/10.32523/ejpfm.2021050308
First Page
235
Last Page
241
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