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Abstract

Radiative relaxations of electronic excitations - self-trapped excitons (STE) in regular lattice sites (intrinsic luminescence) and exciton-like formations (ELF) in the field of homologous cations (exciton-like luminescence). It has been found that the maximum effect of luminescence enhancement occurs upon uniaxial deformation along the <110> crystallographic direction (compared to <100>), which coincides with the direction of the self-trapped anion exciton (<110>) in the KBr crystal matrix. The exciton mechanism was estimated from the increase in the intensity of the intrinsic s(4, 42eV) - and p(2, 3eV) - luminescences of STE, and the enhancement of luminescence intensity of near-single Na+ (2.85 eV), pair ions Na+ , Na+ (3.1 eV) and Na+ Pb++ (3.4 eV)- centers - recombination mechanism of radiative relaxation of electronic excitations.

Article Type

Original Study

First Page

185

Last Page

196

Creative Commons License

Creative Commons Attribution 4.0 International License
This work is licensed under a Creative Commons Attribution 4.0 International License.

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