Abstract
In the presented article, samples were studied using Auger electron spectroscopy, recording the angular dependences of the coefficient of elastically reflected electrons h, and spectroscopy of elastically reflected electrons. A change in the composition and degree of disorder of the surface layers of Si (111) was detected when bombarded with Ar+ and K+ ions with a change in energy E0 ∼ from 1 to 10 keV and ion dose from ∼ 1013 to 1017 cm−2. It was found that although the Ar and K atoms have the same masses, at the same ion energies, the degree of disordering of the near-surface Si(111) layer differs significantly. The observed effect is explained by the significant difference in their ionic radii.
It is shown that at E0≥3 keV, the complete amorphization of near-surface layers occurs at relatively
lower doses than surface amorphization.
Article Type
Original Study
First Page
249
Last Page
255
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.
Recommended Citation
Umirzakov, B. E.; Bekpulatov, I. R.; Imanova, G. T.; Turapov, I. Kh.; and Jumaev, J. M.
(2023)
"Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions,"
Eurasian Journal of Physics and Functional Materials: Vol. 7:
No.
4, Article 5.
DOI: https://doi.org/10.32523/ejpfm.2023070405
