Abstract
The article presents the first results of the study of structural and morphological features of swift (220 MeV) xenon ion induced defects in polycrystalline Si3N4 during post-irradiation heat treatment. The approximate temperature range of ion track region recrystallization is defined as 300 - 800 °C, at 800 °C complete structural relaxation was observed in the in-situ and ex-situ modes. It was found that the track recovery process, as expected, depends on the grain size and thickness of the sample. For complete recrystallization in both studied modes, a short annealing time was required due to the nature of the initial defects (before heating).
Article Type
Original Study
First Page
16
Last Page
20
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.
Recommended Citation
Ibrayeva, A.; O’Connell, J.; Vuuren, A Janse van; and Skuratov, V.
(2025)
"Annealing Of Irradiation Defects In Si3n4: Tem Examination,"
Eurasian Journal of Physics and Functional Materials: Vol. 9:
No.
1, Article 2.
DOI: https://doi.org/10.69912/2616-8537.1237
